SCT50N120 Datasheet, Mosfet, STMicroelectronics

✔ SCT50N120 Features

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode

✔ SCT50N120 Application

Figure 1: Internal schematic diagram
Solar inverters, UPS
Motor drives
High voltage DC-DC converters

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SCT50N120

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results

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Stock and price

STMicroelectronics

SICFET N-CH 1200V 65A HIP247

DigiKey

SCT50N120

570 In Stock

Qty : 30 units

Unit Price : $18.13

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SCT50N120 Silicon carbide Power MOSFET STMicroelectronics