SCT50N120 - 1200V 65A Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT50N120
Manufacturer	STMicroelectronics
File Size	201.28 KB
Description	1200V 65A Silicon carbide Power MOSFET
Datasheet	SCT50N120-STMicroelectronics.pdf

SCT50N120 Product details

Description

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability.These

Features

HiP247 3 2 1 D(2, TAB).
Very low RDS(on) over the entire temperature range.
Very high operating junction temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Low capacitance.

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Published: Mar 24, 2020 |