STB11N65M5 Datasheet - STMicroelectronics

STB11N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbas.

STB11N65M5 Features

* Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A

* Worldwide best RDS(on)

* area

* Higher VDSS rating and high dv/dt capability

* Excellent switching performance

* 100% avalanche tested Applications

* Sw

STB11N65M5 Datasheet (0.97 MB)