STB155N3H6 Datasheet - STMicroelectronics

STB155N3H6 N-channel MOSFET

These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STB155N3H6.

STB155N3H6 Features

* Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness Application

* Switching applications

* Automot

STB155N3H6 Datasheet (921.79 KB)