STB155N3LH6

N-channel MOSFET

STMicroelectronics

STB155N3LH6 Features

* Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package

* 100% avalanche tested

* Logic level drive ID(1) PTOT 80 A 110 W Applications

* Switching applications

* Automotive Description These devices are N-channel Power MOSFETs developed

STB155N3LH6 General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram $4!"OR ' Ta.

STB155N3LH6 Datasheet (0.96 MB)