STB34N50DM2AG

N-CHANNEL POWER MOSFET

STMicroelectronics

STB34N50DM2AG Features

* Order code VDS STB34N50DM2AG 500 V RDS(on) max. 0.12 Ω ID PTOT 26 A 190 W

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely h

STB34N50DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB34N50DM2AG Datasheet (753.73 KB)

STB34N50DM2AG Datasheet Preview — Preview of STB34N50DM2AG PDF

Datasheet Details

Part number:

STB34N50DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

753.73 KB

Description:

N-channel power mosfet.
STB34N50DM2AG Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2.

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STB34N50DM2AG N-CHANNEL POWER MOSFET STMicroelectronics

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STB34N50DM2AG Features

STB34N50DM2AG General Description

Datasheet Details

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STB34N50DM2AG Distributor