STB34N50DM2AG Datasheet - STMicroelectronics

STB34N50DM2AG N-CHANNEL POWER MOSFET

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB34N50DM2AG Features

* Order code VDS STB34N50DM2AG 500 V RDS(on) max. 0.12 Ω ID PTOT 26 A 190 W

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely h

STB34N50DM2AG Datasheet (753.73 KB)