STB34NM60N

N-CHANNEL POWER MOSFET

STMicroelectronics

STB34NM60N Features

* TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%

* 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance

STB34NM60N General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

STB34NM60N Datasheet (1.30 MB)