STB34NM60ND Datasheet - STMicroelectronics

STB34NM60ND N-CHANNEL POWER MOSFET

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon.

STB34NM60ND Features

* Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND

* The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate i

STB34NM60ND Datasheet (1.20 MB)