STF28N60M2 Datasheet (STMicroelectronics)

STF28N60M2, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

STF28N60M2 Features

* 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order code VDS @ TJmax RDS(on) max STF28N60M2 STFI28N60M2 650 V 0.150 Ω ID 22 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener