Description
STGB40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) G1C2TABE3_NO_DIODE Featur.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.8 V (typ. ) @ IC = 40 A
* Tight parameters distribution
* Safe paralleling
Applications
* Welding
* PFC converters - single phase input
* Solar inverters (string and central)
* Uninterruptable power supplies (UPS)