STGB4M65DF2 Datasheet, Igbt, STMicroelectronics

STGB4M65DF2 Features

• Igbt
• 6 µs of short-circuit withstand time
• VCE(sat) = 1.6 V (typ.) @ IC = 4 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resi

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Part number:

STGB4M65DF2

Manufacturer:

STMicroelectronics ↗

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971.33kb

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series I

STGB4M65DF2 Application

• Applications
• Motor control
• UPS
• PFC Description This device is an IGBT developed using an advanced proprietary trench g

TAGS

STGB4M65DF2

STMicroelectronics

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