STGD4H60DF Datasheet (STMicroelectronics)

STGD4H60DF, IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Moreover, a

STGD4H60DF Features

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A

* Tight parameter distribution

* Low thermal resistance

* Short-circuit rated

* Soft and fast recovery antiparallel diode NG1E3C2T Applications

* Industrial