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STGD4H60DF IGBT

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Description

STGD4H60DF Datasheet Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.6 V (typ. ) @ IC = 4 A
* Tight parameter distribution
* Low thermal resistance
* Short-circuit rated

Applications

* Industrial motor control
* Dishwashers
* Refrigerators and freezers

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