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STGD4H60DF - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGD4H60DF
Manufacturer	STMicroelectronics ↗
File Size	398.77 KB
Description	IGBT
Datasheet	STGD4H60DF-STMicroelectronics.pdf

STGD4H60DF Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.6 V (typ. ) @ IC = 4 A.
Tight parameter distribution.
Low thermal resistance.
Short-circuit rated.
Soft and fast recovery antiparallel diode NG1E3C2T.

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Published: Sep 3, 2023 |