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STGD4M65DF2

IGBT

STGD4M65DF2 Features

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.6 V (typ.) @ IC = 4 A

* Tight parameter distribution

* Safer paralleling

* Low thermal resistance

* Soft and very fast recovery antiparallel diode Applications

* Motor control

* UPS

* PFC Description This devic

STGD4M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, .

STGD4M65DF2 Datasheet (416.53 KB)

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Datasheet Details

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STGD4M65DF2 IGBT STMicroelectronics

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