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STH140N6F7-2 N-CHANNEL POWER MOSFET

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Description

STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

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