STH140N6F7-2 Datasheet - STMicroelectronics

STH140N6F7-2 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH140N6F7-2 STH140N6F7-6 Table 1: Device su.

STH140N6F7-2 Features

* Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications Descrip

STH140N6F7-2 Datasheet (696.11 KB)