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STH145N8F7-2AG Datasheet - STMicroelectronics

STH145N8F7-2AG N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH145N8F7-2AG Table 1: Device summary Mark.

STH145N8F7-2AG Features

* Order code STH145N8F7-2AG VDS 80 V RDS(on) max. 4 mΩ ID 90 A PTOT 200 W

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggednes

STH145N8F7-2AG Datasheet (539.21 KB)