STH160N4LF6-2 Datasheet (STMicroelectronics)

STH160N4LF6-2, N-channel Power MOSFET

*Ć This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

6ĆĆ $0Y Order code STH160N4LF6-2 Table 1.

Device summary Mark

STH160N4LF6-2 Features

* Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* Logic level drive

* High avalanche ruggedness

* 100% avalanche tested Figure 1. Internal schematic diagram