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STH160N4LF6-2 N-channel Power MOSFET

STH160N4LF6-2 Description

STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2 3 1 .
Ć  This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

STH160N4LF6-2 Features

* Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* Logic level drive
* High avalanche ruggedness
* 100% avalanche tested Figure 1. Internal schematic diagram

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics STH160N4LF6-2-like datasheet