STH270N8F7-2 Datasheet - STMicroelectronics

STH270N8F7-2 N-channel MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STH270N8F7-2 STH270N8F7-6 STP270N8.

STH270N8F7-2 Features

* Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 180 A G(1) G(1) S(2,

STH270N8F7-2-STMicroelectronics.pdf