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STH270N8F7-6, STH270N8F7-2 Datasheet - STMicroelectronics

STH270N8F7-6 N-channel MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STH270N8F7-2 STH270N8F7-6 STP270N8.

STH270N8F7-6 Features

* Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 180 A G(1) G(1) S(2,

STH270N8F7-2-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STH270N8F7-6, STH270N8F7-2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STH270N8F7-6, STH270N8F7-2

Manufacturer:

STMicroelectronics ↗

File Size:

501.99 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: STH270N8F7-6, STH270N8F7-2.
Please refer to the document for exact specifications by model.

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STH270N8F7-6 STH270N8F7-2 N-channel MOSFET STMicroelectronics

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