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STH272N6F7-6AG N-CHANNEL POWER MOSFET

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Description

STH272N6F7-6AG Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package Datasheet - production data TAB 7 1.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code STH272N6F7-6AG VDS 60 V RDS(on) max. 1.5 mΩ ID 180 A

Applications

* and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications

STH272N6F7-6AG Distributors

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STH272N6F7-6AG N-CHANNEL POWER MOSFET STMicroelectronics
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