STH275N8F7-2AG - N-CHANNEL POWER MOSFET

STMicroelectronics

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Datasheet Details

Part number	STH275N8F7-2AG
Manufacturer	STMicroelectronics
File Size	718.04 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH275N8F7-2AG-STMicroelectronics.pdf

STH275N8F7-2AG Product details

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A.
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 22, 2019 |