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STH290N4F6-2AG Datasheet - STMicroelectronics

STH290N4F6-2AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6 .

STH290N4F6-2AG Features

* Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power lo

STH290N4F6-2AG Datasheet (357.54 KB)

Preview of STH290N4F6-2AG PDF

Datasheet Details

Part number:

STH290N4F6-2AG

Manufacturer:

STMicroelectronics ↗

File Size:

357.54 KB

Description:

N-channel power mosfet.

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STH290N4F6-2AG N-channel Power MOSFET STMicroelectronics

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