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STH290N4F6-2AG N-channel Power MOSFET

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Description

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datashee.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

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Features

* Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W

Applications

* and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss Applications

STH290N4F6-2AG Distributors

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