STH290N4F6-2AG Datasheet (STMicroelectronics)

STH290N4F6-2AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6

STH290N4F6-2AG Features

* Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power lo