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STH90N55F4-2

N-channel Power MOSFET

STH90N55F4-2 Features

* Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008 Ω t(s)

* Exceptional dv/dt capability

* Extremely low on-resistance RDS(on) uc

* 100% avalanche tested 90 A rodApplications te P

* Switching applications oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using S

STH90N55F4-2 General Description

bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance. 2 3 3 1 H²PAK Figure 1. Internal schematic diagram $ ' .

STH90N55F4-2 Datasheet (381.12 KB)

Preview of STH90N55F4-2 PDF

Datasheet Details

Part number:

STH90N55F4-2

Manufacturer:

STMicroelectronics ↗

File Size:

381.12 KB

Description:

N-channel power mosfet.

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STH90N55F4-2 N-channel Power MOSFET STMicroelectronics

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