STI175N4F6AG N-channel Power MOSFET

STMicroelectronics

STI175N4F6AG Description

STI175N4F6AG Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

STI175N4F6AG Features

* Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W

STI175N4F6AG Applications

* and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss Applications
* Switching applications

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Datasheet Details

Part number: STI175N4F6AG
Manufacturer: STMicroelectronics ↗
File Size: 541.75 KB
Datasheet: STI175N4F6AG-STMicroelectronics.pdf
Description: N-channel Power MOSFET

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N-channel Power MOSFET STMicroelectronics

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