STI175N4F6AG Datasheet (STMicroelectronics)

STI175N4F6AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STI175N4F6AG Table 1: Device summary Marking 175N4F6 Package I²PAK Packing Tube January 2016 D

STI175N4F6AG Features

* Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switching appli