STI35N65M5 - N-channel Power MOSFET
' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low onresistance, which is unmatched among sili
STI35N65M5 Features
* Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω 27 A 27 A(1) 27 A 27 A 27 A 1. Limited only by maximum temperature allowed
* Worldwide best RDS(on)
* area
* High
