STI360N4F6 Datasheet (STMicroelectronics)

STI360N4F6, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

$0Y Order codes STI360N4F6 STP360N4F6 Table 1.

Device summary Marking Packages 360N4F6 I²PAK TO-2

STI360N4F6 Features

* TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%

* 6 Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Low gate c