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STL11N60M2-EP

N-channel Power MOSFET

STL11N60M2-EP Features

* Order code VDS RDS(on) max. STL11N60M2-EP 600 V 0.654 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected Applications G(4)

* Switching appli

STL11N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su.

STL11N60M2-EP Datasheet (595.49 KB)

Preview of STL11N60M2-EP PDF

Datasheet Details

Part number:

STL11N60M2-EP

Manufacturer:

STMicroelectronics ↗

File Size:

595.49 KB

Description:

N-channel power mosfet.
STL11N60M2-EP Datasheet N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package 1 2 3 4 PowerFLAT™ 5x6 HV D(5.

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STL11N60M2-EP N-channel Power MOSFET STMicroelectronics

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