STL160N10F8 Datasheet - STMicroelectronics

STL160N10F8 N-channel Power MOSFET

The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and mor.

STL160N10F8 Features

* Order code STL160N10F8 VDS 100 V RDS(on) max. 3.2 mΩ ID 158 A PowerFLAT 5x6

* MSL1 grade

* 175 °C maximum operating junction temperature

* 100% avalanche tested

* Low gate charge Qg D(5, 6, 7, 8) Applications 8 76 5

* Server and Telecom power

STL160N10F8-STMicroelectronics.pdf