STL160N3LLH6 Datasheet - STMicroelectronics

STL160N3LLH6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram $$$$ '333 .

STL160N3LLH6 Features

* Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* Very low switching gate charge

* High avalanche ruggedness

* Low gate drive power losses

STL160N3LLH6-STMicroelectronics.pdf