STL165N10F8AG Datasheet - STMicroelectronics

STL165N10F8AG Automotive N-channel Power MOSFET

The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and .

STL165N10F8AG Features

* Order code VDS RDS(on) max. 4 3 2 1 PowerFLAT 5x6 STL165N10F8AG

* AEC-Q101 qualified

* MSL1 grade 100 V 3.2 mΩ D(5, 6, 7, 8) 8765

* 175 °C maximum operating junction temperature

* 100% avalanche tested

* Low gate charge Qg

* Wettable flank p

STL165N10F8AG-STMicroelectronics.pdf