STL3N10F7 Datasheet (STMicroelectronics)

STL3N10F7, N-CHANNEL POWER MOSFET

th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

6(D) 5(D) 4(S) Bottom view AM11269v1 Order code STL3N10F7 Table 1.

Device summary Marking Packag

STL3N10F7 Features

* 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Order code STL3N10F7 VDS 100 V RDS(on) max 0.07 Ω

* N-channel enhancement mode

* Low gate charge

* 100% avalanche rated ID 4A Applications

* Switching applications Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) DS Descr