STP23NM50N

N-channel Power MOSFET

STMicroelectronics

STP23NM50N Features

* Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Application Switching applications Description These devices are made using the sec

STP23NM50N General Description

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.

STP23NM50N Datasheet (422.67 KB)