STP33N60M2 Datasheet - STMicroelectronics

STP33N60M2 N-Channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

STP33N60M2 Features

* Order codes VDS @ TJmax RDS(on) max. ID STF33N60M2 STI33N60M2 STP33N60M2 650 V 0.125 Ω 26 A STW33N60M2

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected Package TO-220FP I²PAK TO-220 TO-247

STP33N60M2-STMicroelectronics.pdf