STP38N06 Datasheet (STMicroelectronics) - N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR

STP38N06, N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR

www.DataSheet4U.com STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P38N06 s s s s s s s s V DSS 60 V R DS(on) < 0.03 Ω ID 38 A ( ) TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOT