STS8DN6LF6AG Datasheet (STMicroelectronics) - Automotive-grade dual N-channel Power MOSFET

STS8DN6LF6AG, Automotive-grade dual N-channel Power MOSFET

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO

STS8DN6LF6AG Features

* Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6)

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level G1(2) G2(4) A