STS8N6LF6AG Datasheet (STMicroelectronics)

STS8N6LF6AG, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STS8N6LF6AG Product summary Order code STS8N6LF6AG Marking 8N6LF6 Package SO-8 Pack

STS8N6LF6AG Features

* Order code VDS RDS(on) max. ID STS8N6LF6AG 60 V 24 mΩ 8A PTOT 3.2 W

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level Applications

* Switching a