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STW19NM60N Datasheet - STMicroelectronics

STW19NM60N N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STW19NM60N Features

* 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W

* Designed for automotive applications and AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gat

STW19NM60N-STMicroelectronics.pdf

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Datasheet Details

Part number:

STW19NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

544.55 KB

Description:

N-channel power mosfet.

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