STW25N60M2-EP

N-CHANNEL POWER MOSFET

STMicroelectronics

STW25N60M2-EP Features

* Order code VDS @ TJmax RDS(on) max. STW25N60M2-EP 650 V 0.188 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected ID 18 A D(2, TAB) G(1) Applicatio

STW25N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1 improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, .

STW25N60M2-EP Datasheet (253.47 KB)