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STWA50N65DM2AG

N-CHANNEL POWER MOSFET

STWA50N65DM2AG Features

* Order code STWA50N65DM2AG VDS 650 V RDS(on) max. 0.087 Ω ID 38 A PTOT 300 W Figure 1: Internal schematic diagram D(2)

* AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremel

STWA50N65DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STWA50N65DM2AG Datasheet (721.94 KB)

Preview of STWA50N65DM2AG PDF

Datasheet Details

Part number:

STWA50N65DM2AG

Manufacturer:

STMicroelectronics ↗

File Size:

721.94 KB

Description:

N-channel power mosfet.
STWA50N65DM2AG Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A Power MOSFET MDmesh™ DM2 in TO-247 long leads package Datasheet - production data.

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TAGS

STWA50N65DM2AG N-CHANNEL POWER MOSFET STMicroelectronics

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