Description
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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density
Features
- 3 2 1
TO-247 TO-247 long leads
Order codes VDS @ TJmax RDS(on) max ID
STW57N65M5 STWA57N65M5
710 V
0.063 Ω 42 A.
- Worldwide best RDS(on).
- area amongst the silicon based devices.
- Higher VDSS rating, high dv/dt capability.
- Excellent switching performance.
- Easy to drive, 100% avalanche tested
Figure 1. Internal schematic diagram
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