STY50N105DK5

N-Channel MOSFET

STMicroelectronics

STY50N105DK5 Features

* Order code VDS RDS(on) max. ID STY50N105DK5 1050 V 120 mΩ 46 A

* Fast-recovery body diode

* Best RDS(on) x area

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness PTOT 625 W D(2, TAB) Appli

STY50N105DK5 General Description

This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fastrecovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)
* area and one of the most effective switching behaviors, ideal for half brid.

STY50N105DK5 Datasheet (229.99 KB)