* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c IDM -Pulsed c
STS3411A
SamHop Microelectronics
98.95 KB
P-channel enhancement mode field effect transistor.
STS3411AGreen Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) .
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