* Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a a Limi
STS3414
SamHop Microelectronics
169.47 KB
N-channel mosfet.
Green Product
STS3414
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON).
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