* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. Halogen free. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
STS3419
SamHop Microelectronics
105.30 KB
P-channel enhancement mode field effect transistor.
Green Product
STS3419
Ver 2.2
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-3.
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