STS3417 Datasheet - SamHop Microelectronics

STS3417, P-Channel Enhancement Mode Field Effect Transistor

Gr Pr STS3417 Ver 1.0 S a mHop Microelectronics C orp.P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) M.

Features

* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous

STS3417-SamHopMicroelectronics.pdf