K4S281632D-L1H Datasheet - Samsung semiconductor

K4S281632D-L1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supporte.

K4S281632D-L1H Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632D-L1H Datasheet (112.04 KB)

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Datasheet Details

Part number:

K4S281632D-L1H

Manufacturer:

Samsung semiconductor

File Size:

112.04 KB

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

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K4S281632D-L1H 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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