K4S281632M-TC1L Datasheet, Lvttl, Samsung semiconductor

K4S281632M-TC1L Features

• Lvttl
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latenc

PDF File Details

Part number:

K4S281632M-TC1L

Manufacturer:

Samsung semiconductor

File Size:

87.41kb

Download:

📄 Datasheet

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl. The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated wit

K4S281632M-TC1L Application

• Applications ORDERING INFORMATION Part No. K4S281632M-TC/L80 K4S281632M-TC/L1H K4S281632M-TC/L1L Max Freq. 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3)

TAGS

K4S281632M-TC1L

Samsung semiconductor

📁 Related Datasheet

K4S281632M-TC10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TC - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TC80 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TL - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TL10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TL1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TL1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-TL80 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.

K4S281632M-L10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c.