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K4S640832K, K4S641632K - 64Mb K-die SDRAM

K4S640832K Description

K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND.
The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 word.

K4S640832K Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S640832K Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. 1

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This datasheet PDF includes multiple part numbers: K4S640832K, K4S641632K. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S640832K, K4S641632K
Manufacturer
Samsung semiconductor
File Size
211.22 KB
Datasheet
K4S641632K_Samsungsemiconductor.pdf
Description
64Mb K-die SDRAM
Note
This datasheet PDF includes multiple part numbers: K4S640832K, K4S641632K.
Please refer to the document for exact specifications by model.

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64Mb K-die SDRAM Samsung semiconductor
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