K4S640832K - 64Mb K-die SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S640832K
Manufacturer	Samsung semiconductor
File Size	211.22 KB
Description	64Mb K-die SDRAM
Datasheet	K4S640832K Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S640832K, K4S641632K. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S640832K datasheet.

Product details

Description

The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms refr.

📁 Similar Datasheet

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Other Datasheets by Samsung semiconductor

K4S640832C - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E-TC1H - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E-TC1L - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E-TC75 - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Published: May 6, 2010 |