K6F2016U4G Datasheet - Samsung semiconductor

K6F2016U4G 2Mb(128K x 16 bit) Low Power SRAM

The K6F2016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with lo.

K6F2016U4G Family Preliminary CMOS SRAM www.DataSheet4U.com 2Mb(128K x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY.

K6F2016U4G_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6F2016U4G

Manufacturer:

Samsung semiconductor

File Size:

187.03 KB

Description:

2mb(128k x 16 bit) low power sram.

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K6F2016U4G K6F2016U4G 2Mb128K bit Low Power SRAM Samsung semiconductor

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