K6F2016V4D Datasheet (Samsung semiconductor)

K6F2016V4D, CMOS SRAM

K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ : 25 to 20ns for 70ns product - Change for tDW : 20 to 25ns for 55ns product Draft Date January 6, 2000 May 4, 2000 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right

K6F2016V4D Features

* Process Technology: Full CMOS

* Organization: 128K x16 bit

* Power Supply Voltage: 3.0~3.6V

* Low Data Retention Voltage: 1.5V(Min)

* Three state output status and TTL Compati