K6F2016U4E Datasheet (Samsung semiconductor) - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E, 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with l

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product.

- Change ICC2 from 17 to 20mA for 70ns product.

- Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary