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K6F2016U4E

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Features

* CMOS SRAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design

K6F2016U4E General Description

The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with l.

K6F2016U4E Datasheet (158.46 KB)

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Datasheet Details

Part number:

K6F2016U4E

Manufacturer:

Samsung semiconductor

File Size:

158.46 KB

Description:

128k x16 bit super low power and low voltage full cmos static ram.
K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History .

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K6F2016U4E 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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