K6F8016R6A Datasheet (Samsung semiconductor)

K6F8016R6A, CMOS SRAM

K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft 0.1 Revise - Change package type from FBGA to TBGA 1.0 Finalize - Improved ICC1 from 3 to 2mA - Removed ICC, ISB 1.01 Revise - Errata correction for finalized year 2000 to 2001 2.0 Revise - Isb1 change : 15µA to 10µA - IDR change : 8µA to 6µA - Icc2 change : 25mA to 20mA for 70ns product 20mA to 18mA for 85ns product - Remove "A1